Semiconductor photodetector with potential barrier regions

Details Semiconductor photodetector with potential barrier regions Semiconductor photodetector with potential barrier regions

1994-08-11

1995-10-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257184, 257446, 257465, H01L 2714, H01L 3100

Patent

active

054593336

ABSTRACT:
A semiconductor photodetector has a channel of conductive material which connects two terminal poles and is defined by potential barrier regions and by space-charge regions that can be reduced by means of incident light. The channel is comprised of a conductive layer parallel to the surface and having laterally narrowing barrier regions extending through the layer.

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S. Chandrasekhar et al.; High Speed Monolithic P-I-N/HBT and HPT/HBT Photoreceivers Implemented with Simple Phototransistor Structure; Proc. ECOC Conference, 1993, Berlin, Germany.
H. David Law et al.; "Alloy Heterostructure High Speed Avalanche Photodiodes", Journal of Quantum Electronics, QE15;, 549 (1979).
Kemmer, J., Two-Dimensional X-Ray Detectors on a Silicon Basis, "Physics In Our Time", vol. 19, 1988, No. 5, pp. 150-158.

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