Semiconductor photodetector with improved quantum efficiency...

Details Semiconductor photodetector with improved quantum efficiency... Semiconductor photodetector with improved quantum efficiency...

2008-12-04

2011-10-11

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257S437000, C257SE31127

Reexamination Certificate

active

08035181

ABSTRACT:
A semiconductor photodetector comprises: a semiconductor substrate; a first multilayer reflective layer on a first surface of the semiconductor substrate and including semiconductor layers; a first optically-resonant layer on the first multilayer reflective layer; a second multilayer reflective layer on the first optically-resonant layer and including semiconductor layers; a light absorbing layer on the second multilayer reflective layer; a reflective film on the light absorbing layer; and an antireflective film on a second surface of the semiconductor substrate. The first optically-resonant layer has a larger thickness than the semiconductor layers of the first and second multilayer reflective layers. The combined optical thickness of the layers between the second multilayer reflective layer and the reflective film is not equal to the optical thickness of the first optically-resonant layer.

REFERENCES:
patent: 5293393 (1994-03-01), Kosaka
patent: 7566942 (2009-07-01), Viens et al.
patent: 2001-308368 (2001-11-01), None

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