Semiconductor photodetector with converging structure on...

Details Semiconductor photodetector with converging structure on... Semiconductor photodetector with converging structure on...

2006-06-06

2010-02-23

Sohn, Seung C (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S791000

Reexamination Certificate

active

07667182

ABSTRACT:
A semiconductor photodetector which can obtain spectral sensitivity characteristics close to relative luminous characteristics compared to a conventional semiconductor photodetector is obtained at low cost. The semiconductor photodetector includes a semiconductor light receiving element having high spectral sensitivity in wavelengths in a range from approximately 400 nm to 1,100 nm and an optical transmitting resin where micro particles is dispersed in a transparent resin with an amount which can be obtain photocurrent from the semiconductor light receiving element by transmitting light in wavelengths in the visible light region while blocking light in wavelengths in the infrared region. The semiconductor photodetector further includes a converging structure on a light receiving surface of the semiconductor photodetector.

REFERENCES:
patent: 5623143 (1997-04-01), Takamatsu
patent: 2006/0157727 (2006-07-01), Takamura et al.
patent: 9-15044 (1997-01-01), None
patent: 2005-12885 (2005-01-01), None

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