Semiconductor photodetector using avalanche multiplication and s

Details Semiconductor photodetector using avalanche multiplication and s Semiconductor photodetector using avalanche multiplication and s

1994-02-28

1995-11-28

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 18, 257186, H01L 31075, H01L 310304

Patent

active

054710685

ABSTRACT:
On a p-type InP substrate 12, there are provided a p-type InGaAs light absorptive layer 14 and an InAlAs/InGaAs superlattice avalanche multiplier layer 15. By selecting the composition of the well layer and the barrier layer of the avalanche multiplier layer 15, a strain is applied to at least one of them so that the difference .DELTA. Ec between the energies at the lower end of the conduction band of the well layer and/or the barrier layer is increased, or the difference .DELTA. Ev between the energies at the upper end of the valence band of the well layer and/or the barrier layer is decreased, and/or the effective mass of the hole within the well layer and/or barrier layer is decreased. Thus, the ionization factor ratio is further improved, or the pile-up of the hole is alleviated, or the traveling time of the hole is shortened to achieve an avalanche multiplier semiconductor photodetector having a wide bandwidth, low noise and high response characteristic.

REFERENCES:
patent: 4952792 (1990-08-01), Caridi
patent: 5187553 (1993-02-01), Makita
Capasso et al. Appl. Phys. Lett 40(1), 1 Jan. 1982 "Enhancement . . . ratio" pp. 38-40.
Taguchi et al. IEEE Elec. Dev. Lett vol. EDL-7, No. 4 Apr. 1986, "Planar InP/InGaAs . . . Ring" pp. 257-258.
Forrest et al. IEEE Elec. Dev Lett. vol. EDL-2, No. 11, Nov. 1981 "Low Dark-Current . . . Photodiodes" pp. 283-285.
Kurtz et al., IEEE Elec. Dev. Lett vol. 11, No. 1, Jan. 1990 "High Defectivity . . . Detector" pp. 54-56.
Gershomi et al. Applied Physics Lett. vol. 53 No. 14 3 Oct. 1988 pp. 1294-1296.
Kuo et al. J. Appl. Phys 57(12), 15 Jun. 1985 "Effect of Mismatch Strain . . . " pp. 5428-5432.
Wang et al. J. Appl Phys 67(1) 1 Jan. 1990 "Strain effects . . . " pp. 344-352.

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