Semiconductor photodetector including background light region

Details Semiconductor photodetector including background light region Semiconductor photodetector including background light region

1996-11-05

1998-09-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257184, 257292, 257461, H01L 29205, H01L 31107

Patent

active

058118420

ABSTRACT:
In a photodiode, p-type background light capture regions at least partially surround a p-type light sensing region and are spaced at a distance from the light sensing region. Holes generated in response to background light are captured by depletion layers of the background light capture regions and do not influence photocurrent. Thus, no deterioration in response speed occurs and the response speed is increased.

REFERENCES:
patent: 5315148 (1994-05-01), Fujimura
patent: 5332919 (1994-07-01), Fujimura
patent: 5481124 (1996-01-01), Kozuka et al.
"Photo Communication Engineering", Feb. 15, 1984, pp. 372-373 (No English Translation).

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