Semiconductor photodetector for detecting light having a...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C257S431000

Reexamination Certificate

active

10913398

ABSTRACT:
Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

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Dankovic et al., “Analysis of Radiation Absorptance in Silicon Ultraviolet Detector”, IEEE, May 2000, pp. 585-588.
Lerch et al., “Spectral Characterization of a Blue-Enhanced Silicon Photodetector”, IEEE, Aug. 2001, pp. 1220-1224.
Mullins et al., “A Simply High-Speed Si Schottky Photodiode”, IEEE, Apr. 1991, pp. 360-362.

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