Semiconductor photodetector device with short lifetime region

Details Semiconductor photodetector device with short lifetime region Semiconductor photodetector device with short lifetime region

1992-06-24

1993-12-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257186, 257187, 257438, 257439, H01L 2714

Patent

active

052723640

ABSTRACT:
A semiconductor photodetector device includes a second conductivity type region extending through a first conductivity type window layer to a first conductivity type light absorbing layer and a short carrier lifetime region surrounding ht second conductivity type region such that the lifetime of minority carriers generated in the light absorbing layer outside a depletion layer located around the second conductivity type region is significantly shorter than the lifetime of minority carriers elsewhere within the light absorbing layer. The photodetector device can respond quickly to variations in incident light because the collection of charge carriers generated in the light absorbing layer outside the depletion layer is reduced.

REFERENCES:
patent: 5040039 (1991-08-01), Hattori et al.

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