Semiconductor photodetector device

Details Semiconductor photodetector device Semiconductor photodetector device

2007-05-01

2007-05-01

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S290000, C257S291000, C257S292000, C257S293000

Reexamination Certificate

active

11059500

ABSTRACT:
A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.

REFERENCES:
patent: 4879470 (1989-11-01), Sugawa et al.
patent: 5204544 (1993-04-01), Inoue et al.
patent: 2003/0143786 (2003-07-01), Thomas et al.
patent: 56-60054 (1981-05-01), None
patent: 5-275669 (1993-10-01), None
patent: 9-219534 (1997-08-01), None
patent: 11-233806 (1999-08-01), None

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