Semiconductor photodetector and radiation detecting apparatus

Details Semiconductor photodetector and radiation detecting apparatus Semiconductor photodetector and radiation detecting apparatus

2006-12-27

2011-12-27

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257S443000, C257S448000, C257S452000, C257S457000, C257S461000, C257S462000, C257SE33001

Reexamination Certificate

active

08084836

ABSTRACT:
A photodiode array PD1comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions3as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion12formed between adjacent photosensitive regions3from among the plurality of photosensitive regions3on the detecting surface side of the semiconductor substrate. The carrier capturing portion12has one or plurality of carrier capturing regions13respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

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