Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2004-11-30
2010-11-16
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S459000, C257S448000, C257SE31124
Reexamination Certificate
active
07834413
ABSTRACT:
The present invention relates to a semiconductor photodetector and the like that can be made adequately compact while maintaining mechanical strength. The semiconductor photodetector includes a structural body of layers and a glass substrate. The structural body of layers is arranged from an antireflection film, a high-concentration carrier layer of an n-type (first conductive type), a light absorbing layer of the n-type, and a cap layer of the n-type that are laminated successively. The glass substrate is adhered via a silicon oxide film onto the antireflection film side of the structural body of layers. The glass substrate is optically transparent to incident light.
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Chen Yu
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Jackson, Jr. Jerome
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