Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-08-21
2007-08-21
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S184000, C257S459000, C257SE33076
Reexamination Certificate
active
10500238
ABSTRACT:
In a semiconductor photodetector1according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate2. An n-type GaAs layer3, an i-type GaAs layer4, and a p-type GaAs layer5are successively deposited on the lower step surface formed in a central region of the semi-insulating GaAs substrate2. Furthermore, a p-side ohmic electrode6is provided astride and above a flat surface formed by the p-type GaAs layer5and the upper step surface of the semi-insulating GaAs substrate2, and an n-side ohmic electrode7is provided astride and above a flat surface formed by the n-type GaAs layer3and the middle step surface of the semi-insulating GaAs substrate2.
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Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Ingham John
Weiss Howard
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