Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-04-26
2005-04-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S432000, C257S433000, C257S435000, C257S437000, C257S438000, C257S185000, C257S187000, C438S048000, C438S091000
Reexamination Certificate
active
06885039
ABSTRACT:
There is provided a semiconductor photodetector which comprises (i) an InP substrate(1), (ii) an optical waveguide(5) having an N-type semiconductor layer(32) formed on the InP substrate(1), an optical waveguide core layer(3) formed on a partial area of the N-type semiconductor layer(32), and an upper cladding layer(4) formed on the optical waveguide core layer(3), and (iii) an avalanche photodiode(17) constructed by forming a photo absorbing layer(33), a heterobarrier relaxing layer(34), an underlying layer(14a) of a N-type field dropping layer(35), an overlying layer(14b) of the N-type field dropping layer(35), a carrier multiplying layer(36), and a P-type semiconductor layer(37) in sequence on another area of the N-type semiconductor layer(32), and coupled to the optical waveguide(5), wherein a side surface of the underlying layer(14a) of the N-type field dropping layer(35) comes into contact with a side surface of the optical waveguide core layer(3), and a part of the overlying layer(14b) of the N-type field dropping layer(35) is formed on the optical waveguide core layer(3).
REFERENCES:
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R. B. Emmons; “Avalanche-Photodiode Frequency Response”;Journal of Applied Physics; vol. 38; No. 9; Aug. 1967; pp. 3705-3714./Discussed in the specification.
Armstrong Kratz Quintos Hanson & Brooks, LLP
Erdem Fazli
Fujitsu Limited
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