Semiconductor photodetector

Details Semiconductor photodetector Semiconductor photodetector

2008-09-05

2010-06-22

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S436000

Reexamination Certificate

active

07741691

ABSTRACT:
A semiconductor photodetector includes a semiconductor substrate of a first conductivity type, a light absorption layer of the first conductivity type on the semiconductor substrate and absorbing light, a diffraction grating layer on the light absorption layer and including a diffraction grating diffracting light, a first light transmissive layer of a second conductivity type on the diffraction grating layer and transmitting light, and a second light transmissive layer of the first conductivity type on the diffraction grating layer and surrounding the first light transmissive layer, the second light transmissive layer transmitting light. The diffraction grating surrounds a region of the diffraction grating layer that is directly below the first light transmissive layer.

REFERENCES:
patent: 5568311 (1996-10-01), Matsumoto
patent: 6518638 (2003-02-01), Kuhara et al.
patent: 2003/0178636 (2003-09-01), Kwan et al.
patent: 1-205573 (1989-08-01), None
patent: 02-106979 (1990-04-01), None
patent: 4-116977 (1992-04-01), None
patent: 2003-179249 (2003-06-01), None
patent: 2004-241533 (2004-08-01), None
patent: 2005-159002 (2005-06-01), None
Machine translation of Abstract of the JP 02-106979 has been attached.

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