Semiconductor photodetector

Details Semiconductor photodetector Semiconductor photodetector

1975-06-24

1978-03-14

Edlow, Martin H.

357 15, 357 52, 357 89, H01L 2948

Patent

active

040794059

ABSTRACT:
A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.

REFERENCES:
patent: 3534231 (1970-10-01), Biard
patent: 3742317 (1973-06-01), Shao
patent: 3769558 (1973-10-01), Lindmayer
patent: 3820235 (1974-06-01), Goldman
patent: 3860945 (1975-01-01), Dawson
patent: 3911465 (1975-10-01), Foss
patent: 3959646 (1976-05-01), DE Cremoux
patent: 3978511 (1976-08-01), Digoy
Schneider, Bell System Tech. Journal, Nov. 1966, pp. 1611-1637.

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