Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1996-04-02
1999-03-09
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257458, 257436, H01L 310304, H01L 31075
Patent
active
058804897
ABSTRACT:
A semiconductor device includes a laminated layer structure including at least one semiconductor layer disposed on a first conductivity type semiconductor substrate, a semi-insulating semiconductor layer disposed on the semiconductor laminated layer structure, a second conductivity type semiconductor region disposed on the front surface of the semi-insulating semiconductor layer, a first electrode on the rear surface of the substrate, and a second electrode disposed on the semi-insulating semiconductor layer and in ohmic contact with the second conductivity type semiconductor region. The junction of the semi-insulating semiconductor layer and the second conductivity type semiconductor region does not form a pn junction, the second conductivity type semiconductor region is surrounded by the semi-insulating material, and the leakage current is suppressed so that, without increasing the dark current, the size of the light responsive region can be made close to the size of an incident light spot, and the pn junction capacitance can be reduced while reducing the pn junction area, resulting in a semiconductor device operating at high speed.
REFERENCES:
patent: 5346837 (1994-09-01), Funaba
patent: 5352628 (1994-10-01), Funaba
patent: 5684307 (1997-11-01), Ishimura
C. Cheng, et al., "Monolithically Integrated Receiver Front End: InGaAs p-i-n amplifier," IEEE Trans. Electron Devices, vol. 35, No. 9, Sep. 1988, pp. 1439-1444.
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Yonezu, "Optical Communciation Device Technology", pp. 372-373 and 418-419, 1984.
Niloy K. Dutta, "III-V Device Technologies For Lightwave Applications", AT&T Technical Journal, vol. 68, No. 1, Jan. 1, 1989, pp. 5-18.
Kuchibhotla et al., "Low-Voltage High-Gain Resonant-Cavity Avalanche Photodiode", IEEE Photoniks Technology Letters, vol. 3, No. 4, Apr. 1, 1991, pp. 354-356.
Funaba Shinji
Ishimura Eitaro
Guay John
Mitsubishi Denki & Kabushiki Kaisha
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