Semiconductor photodetector

Details Semiconductor photodetector Semiconductor photodetector

1997-09-03

1999-08-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257186, 257196, 257436, H01L 31105, H01L 31107, H01L 310304

Patent

active

059427710

ABSTRACT:
A semiconductor photodetector includes a semiconductor substrate of a first conductivity type; a light absorption recombination layer disposed on a front surface of the semiconductor substrate and having a band gap energy smaller than the semiconductor substrate; a first conductivity type barrier layer disposed on the light absorption recombination layer and having a band gap energy larger than the light absorption recombination layer; an undoped light absorption layer disposed on the barrier layer and having a band gap energy larger than the light absorption recombination layer and smaller than the barrier layer; an undoped window layer disposed on the light absorption layer and having a band gap energy larger than the light absorption layer; and an impurity doped region of a second conductivity type in a region extending from the window layer to the light absorption layer. A portion of incident light not absorbed in a depletion layer in the light absorption layer is absorbed by the light absorption recombination layer, and electrons and holes generated in the light absorption recombination layer recombine immediately, resulting in reduced response distortion.

REFERENCES:
patent: 4701773 (1987-10-01), Kaneda
patent: 5406097 (1995-04-01), Kusakabe
patent: 5420418 (1995-05-01), Fujimura et al.
patent: 5569942 (1996-10-01), Kusakabe

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