Semiconductor photodetection device and fabrication process...

Details Semiconductor photodetection device and fabrication process... Semiconductor photodetection device and fabrication process...

2006-07-25

2006-07-25

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000

Reexamination Certificate

active

07081639

ABSTRACT:
A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.

REFERENCES:
patent: 4607272 (1986-08-01), Osbourn
patent: 4952792 (1990-08-01), Caridi
patent: 5308995 (1994-05-01), Tsuji et al.
patent: 5313073 (1994-05-01), Kuroda et al.
patent: 5412225 (1995-05-01), Dutta et al.
patent: 5471068 (1995-11-01), Tsuji et al.
patent: 5572043 (1996-11-01), Shimizu et al.
patent: 5698863 (1997-12-01), Pelekanos
patent: 5929462 (1999-07-01), Kasukawa et al.
patent: 6100543 (2000-08-01), Sakata
patent: 6222200 (2001-04-01), Svilans
patent: 6229152 (2001-05-01), Dries et al.
patent: 60-95981 (1985-05-01), None
patent: 62-35682 (1987-02-01), None
patent: 2-90575 (1990-03-01), None
patent: 03-139886 (1991-06-01), None
patent: 04-042983 (1992-02-01), None
patent: 04-212129 (1992-08-01), None
patent: 04-229823 (1992-08-01), None
patent: 0 627 771 (1993-12-01), None
patent: 06-140624 (1994-05-01), None
patent: 06-188449 (1994-07-01), None
patent: 06-296037 (1994-10-01), None
patent: 7-74381 (1995-03-01), None
Ng, “Complete Guide to Semiconductor Devices,” 1995, McGraw Hill, Inc. pp. 402-405.
English translation of JP 7-074,381.
Office Action dated Apr. 13, 2004 from Japanese Patent Office for JP2000-301489.
“High-speed photodetectors on InGaAs/GaAs-on-GaAs superlattices” M. Zirngibl and M. Ilegems; J. Appl. Phys. 69 (12), Jun. 15, 1991.

Affiliated with

Also associated with

Rating

Semiconductor photodetection device and fabrication process... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor photodetection device and fabrication process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photodetection device and fabrication process... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3561458