Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-09-13
2005-09-13
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C250S208100, C250S208200
Reexamination Certificate
active
06943422
ABSTRACT:
A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
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N. Yasuoka et al., “A polarization-independent high-speed PIN photodiode integrated with a spot size converter”; CPT2001 Technical Digest; 2001; pp 105-106.
Kuramata Akito
Kuwatsuka Haruhiko
Yasuoka Nami
Flynn Nathan J.
Sefer Ahmed N.
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