Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-09-29
2011-12-20
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S290000, C257S292000, C257S463000, C257SE31057
Reexamination Certificate
active
08080857
ABSTRACT:
The present invention provides a semiconductor photodetecting device that suppresses sensitivity of a short wavelength component of irradiated light as well as a long wavelength component thereof and has a spectral sensitivity characteristic approximately coincident with a human visibility characteristic, and an illuminance sensor including the semiconductor photodetecting device. The semiconductor photodetecting device has a P-type well region and an N-type well region provided side by side along the surface of a P-type semiconductor substrate, a high-concentration N-type region formed in the neighborhood of the surface of the P-type well region, and a high-concentration P-type region formed in the neighborhood of the surface of the N-type well region. A first photoelectric current which flows through a PN junction formed by the P-type well region and the high-concentration N-type region, and a second photoelectric current obtained by adding a photoelectric current which flows through a PN junction formed by the N-type well region and the P-type semiconductor substrate to a photoelectric current which flows through a PN junction formed by the N-type well region and the high-concentration P-type region are extracted. Predetermined arithmetic processing is performed on the first and second photoelectric currents to obtain an output current.
REFERENCES:
patent: 2006/0172482 (2006-08-01), Komori et al.
patent: 2006-245264 (2006-09-01), None
Le Dung A.
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
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