Semiconductor photocathode and semiconductor photocathode appara

Details Semiconductor photocathode and semiconductor photocathode appara Semiconductor photocathode and semiconductor photocathode appara

1997-05-28

1999-07-13

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 313366, 313542, H01L 2906

Patent

active

059230452

ABSTRACT:
Formed on a semiconductor substrate (10) is a first semiconductor layer (20; light absorbing layer) of p-type which has a first dopant concentration and generates an electron in response to light incident. Formed on the first semiconductor layer (20) is a second semiconductor layer (30; electron transfer layer) of p-type having a second dopant concentration lower than the first dopant concentration. A contact layer (50) forms a pn junction with the p-type second semiconductor layer (30). A surface electrode (80) is formed on and in ohmic contact with the contact layer (50). A third semiconductor layer (40; activation layer) is formed within an opening of the contact layer (50) on the surface of the second semiconductor layer (30). Embedded in the second semiconductor layer (30) is a semiconductor section (60; channel grid) having a third dopant concentration. Thus, the quantum efficiency is improved, while structural pixel separation becomes unnecessary at an open area ratio of 100%, and signal modulation is enabled.

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patent: 4829355 (1989-05-01), Munier et al.
patent: 5047821 (1991-09-01), Costello et al.
Patent Abstracts of Japan, vol. 096, No. 010, Oct. 31, 1996 re JP 08 153463 A; Tokuaki.
Patent Abstracts of Japan, vol. 096, No. 010, Oct. 31, 1996 re JP 08 153462 A, Tokuaki.

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