Semiconductor photocathode and photoelectric tube using the...

Details Semiconductor photocathode and photoelectric tube using the... Semiconductor photocathode and photoelectric tube using the...

2006-04-18

2006-04-18

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S011000, C257S009000

Reexamination Certificate

active

07030406

ABSTRACT:
A semiconductor photocathode comprises a p+-type semiconductor substrate of GaSb, and a p−-type light absorbing layer of InAsSb. A p+-type hole blocking layer is formed between the substrate and the light absorbing layer having wider energy band gap than that of the light absorbing layer, the blocking layer being made of AlGaSb.

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patent: 11-297171 (1999-10-01), None
Infared Technology and Applications XXVI, Bjorn F. Andresen, Gabor F. Fulop, Marija Strojnik, Editors, Proceedings of SPIE vol. 4130 (2000).

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