Semiconductor photo-electrically-sensitive device

Details Semiconductor photo-electrically-sensitive device Semiconductor photo-electrically-sensitive device

1986-05-07

1991-08-27

Jackson, Jr., Jerome

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 4, 357 30, 357 63, 357 64, 136258, H01L 4500, H01L 2712

Patent

active

050437720

ABSTRACT:
A semiconductor photo-electrically-sensitive device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer is disposed on the non-single-crystal semiconductor layer member. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5.times.10.sup.18 atoms/cm.sup.3 or less.

REFERENCES:
patent: 4068020 (1978-01-01), Reuschel
patent: 4510344 (1985-04-01), Berman
patent: 4591892 (1986-05-01), Yamazaki
patent: 4667214 (1987-05-01), Sekimura et al.
Journal of Non-Crystalline Solids 68 (1984), pp. 167-174, N. Holl., Amster., "Isomerization Model . . . a-Si:H".

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