Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-07-06
2009-08-18
Jackson, Jr., Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257S432000, C257SE31127
Reexamination Certificate
active
07575949
ABSTRACT:
In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate. Further, a groove as a guide of an optical waveguide for guiding incident light is disposed opposing the light incident facet, or the substrate end surface at the light incident facet side is protruded by a finite length from a tip part of the light incident facet, or between the optical waveguide and the semiconductor photo-detector is buried in a solid or liquid, or a main reaching area of incident light refracted at an upper layer of the photo-absorption layer is terminated with a substance having a smaller refractive index than the semiconductor layer of photo-absorption region part, or the light incident facet and its vicinity are buried in an organic substance.
REFERENCES:
patent: 4213138 (1980-07-01), Campbell et al.
patent: 4232219 (1980-11-01), Yamamoto et al.
patent: 4744619 (1988-05-01), Cameron
patent: 5075750 (1991-12-01), Kagawa
patent: 5446810 (1995-08-01), Watanabe et al.
patent: 5942771 (1999-08-01), Ishimura
patent: 5949120 (1999-09-01), Kato et al.
patent: 02-016510 (1990-01-01), None
patent: 06-021505 (1994-01-01), None
patent: 06-029566 (1994-02-01), None
patent: 10-190042 (1998-07-01), None
Jackson, Jr. Jerome
Nippon Telegraph and Telephone Corporation
Ostrolenk Faber Gerb & Soffen, LLP
LandOfFree
Semiconductor photo-detector, semiconductor photo-detection... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor photo-detector, semiconductor photo-detection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photo-detector, semiconductor photo-detection... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4117030