Semiconductor photo-detector having a two-stepped impurity profi

Details Semiconductor photo-detector having a two-stepped impurity profi Semiconductor photo-detector having a two-stepped impurity profi

1988-09-01

1990-08-14

Jackson, Jr., Jerome

357 13, 357 16, 357 52, H01L 29205, H01L 3106

Patent

active

049491440

ABSTRACT:
A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate, a light absorption layer of a first conductivity type formed on a semiconductor substrate, a multiplication layer of a first conductivity type formed on the light absorption layer to multiply a photocurrent, a semiconductor region of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.

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