Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1996-10-30
1998-12-08
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257 16, 257 21, 257 22, 257 75, 257 77, H01L 310328, H01L 2915
Patent
active
058474188
ABSTRACT:
Described is a semiconductor photo detector comprising, between a lower electrode and an upper electrode, an optical absorption layer which generates photo carriers, receiving light and an amplification layer which amplifies the photo carriers so generated. In the semiconductor photo detector, the amplification layer is formed of a well layer which causes an avalanche phenomenon and a barrier layer which has a band gap larger than that of the optical absorption layer. The well layer is formed of a crystal substance, by which at the interface with the barrier layer, the energy value of the conduction band of the photo carriers in the well layer is lower than that in the barrier layer and at the same time, the difference in the energy value of the conduction band between the well layer and the barrier layer is larger than the band gap between the valence band and the conduction band of the well layer.
REFERENCES:
patent: 5453629 (1995-09-01), Gofuku et al.
patent: 5481124 (1996-01-01), Kozuka et al.
IEEE Transactions on Electron Devices, vol. 35, No. 8, Aug. 1988, "Amrphous Silicon/Silicon Carbide Superlattice Avalanche Photodiodes", JWO et al., pp. 1279-1283.
ITE'95: 1995 ITE Annual Convention, Annual Meeting Preprint of the Television Society, "Photocurrent Multiplication of a Si:H Staircase Photodiodes", Sawada et al., pp. 73-74.
Kyozuka Shinya
Miyamoto Yasuaki
Nakamura Takeshi
Yamada Takayuki
Fuji 'Xerox Co., Ltd.
Munson Gene M.
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