Semiconductor photo detector

Details Semiconductor photo detector Semiconductor photo detector

2008-01-18

2011-10-18

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE33076

Reexamination Certificate

active

08039918

ABSTRACT:
A semiconductor photo detector is provided that includes a layer structure deposited over a semiconductor substrate, and having a second mesa formed on the semiconductor substrate and a first mesa formed on the second mesa, wherein an outer periphery of the second mesa is located outside of the outer periphery of the first mesa in two-dimensional view, and wherein surfaces of the first mesa and the second mesa are covered by a passivation film.

REFERENCES:
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patent: 2006123410 (2006-11-01), None
International Search Report for PCT/JP2008/000045 mailed Apr. 15, 2008.
I. Watanabe et al., “Design and Performance of InAlGaAs/InAlAs Superlattice Avalanche Photodiodes”, Journal of Lightwave Technology, vol. 15, No. 6, Jun. 1997, p. 1012-1019.

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