Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1996-04-01
1997-08-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257486, 257 15, 257 17, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
056568312
ABSTRACT:
A semiconductor photo detector has its construction such that on a substrate made of InP are formed light absorption layer having a supperlattice structure made of n- type InGaAsP and InAsP, an intermediate layer made of n- type InGaAs, a multiplication layer made of n- type InP and a layer made of p- type layer. The light having a wavelength 1.65 .mu.m being made incident into the detector from the p- type InP layer is absorbed in the superlattice structure light absorption layer of n- type InGaAs/InAsP and changed into carriers, which flowed out an external circuit. Since the superlattice of InGaAs and InAsP makes a lattice matching to InP, it may be possible to prevent that a dark current is generated by a lattice mismatching. The carriers generated by the absorbed light in the light absorption layer pass from the p type side electrode 11 into an external circuit via the n type InGaAsP intermediate layer 4, n+ type InP multiplication layer 5 and p+ type InP layer 8.
Crane Sara W.
NEC Corporation
Wille Douglas A.
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