Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-01-30
2007-01-30
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S465000
Reexamination Certificate
active
10829385
ABSTRACT:
On the front side of an n-type semiconductor substrate5, p-type regions7are two-dimensionally arranged in an array. A high-concentration n-type region9and a p-type region11are disposed between the p-type regions7adjacent each other. The high-concentration n-type region9is formed by diffusing an n-type impurity from the front side of the substrate5so as to surround the p-type region7as seen from the front side. The p-type region11is formed by diffusing a p-type impurity from the front side of the substrate5so as to surround the p-type region7and high-concentration n-type region9as seen from the front side. Formed on the front side of the n-type semiconductor substrate5are an electrode15electrically connected to the p-type region7and an electrode19electrically connected to the high-concentration n-type region9and the p-type region11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.
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Crane Sara
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
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