Semiconductor phase shift device for a charge transfer filter

Details Semiconductor phase shift device for a charge transfer filter Semiconductor phase shift device for a charge transfer filter

1979-01-09

1981-03-10

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307269, 307221D, 307481, 307583, H03K 5135, H03K 515, H03K 505

Patent

active

042556767

ABSTRACT:
A phase shift circuit made from integrable semi-conductor elements. It comprises: a sampling stage formed by two MOS type transistors operating in phase opposition, which supply, from the input signal (S.sub.e), a sampled signal S.sub.ECH ; a first MOS type transistor which forms the phase shift element, receives signal S.sub.ECH on its gate and delivers two signals (S.sub.1 and S.sub.2), which are opposite in phase, at its drain and source respectively; two capacitors, which receive signals S.sub.1 and S.sub.2 respectively, and are associated with polarizing means containing MOS type transistors, which enable the original D.C. components of signals S.sub.1 and S.sub.2 to be replaced by the same D.C. component (V.sub.P).

REFERENCES:
patent: 3311751 (1967-03-01), Maestre
patent: 3626216 (1971-12-01), Bergman
patent: 3641370 (1972-02-01), Heimbigner
patent: 3955100 (1976-05-01), Takahashi et al.
patent: 4035628 (1977-07-01), Lampe et al.
patent: 4140927 (1979-02-01), Feucht
patent: 4145676 (1979-03-01), Benoit-Gonin et al.

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