Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-04-10
2007-04-10
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S639000, C257S640000, C257SE21584
Reexamination Certificate
active
10013103
ABSTRACT:
A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas. A first passivation layer is formed upon the adhesion layer, the first passivation layer and the gas including at least one common chemical element.
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Peter Van Zant, Microchip Fabrication, 2000, McGraw-Hill, p. 596.
Bakker Geoffrey L.
Dass M. Lawrence A.
Seshan Krishna
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Lewis Monica
Wilczewski M.
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