Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-02-27
1998-12-29
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
25037001, 25037003, 25037014, G01T 124, H01L 3100
Patent
active
058545069
ABSTRACT:
A particle-detector is formed on a die of semiconductor material (20) comprising: first and second layers (22, 23) with a first type of conductivity (N), a third layer (21) with a second type of conductivity (P), interposed between the first and second layers (22, 23), first and second means (25, 31; 26, 32) for electrical connection with the first and second layers (22, 23), respectively, disposed on the opposite surfaces thereof to those of the junctions with the third layer (21) and third means (27, 24) for electrical connection with the third layer (21).
To permit large-scale industrial manufacture, the third means (27, 24) for electrical connection with the third layer (21) comprise a region (24) with the second type of conductivity (P) which extends from the front face of the die as far as the third layer (21) and means (27) for surface electrical contact with this region.
REFERENCES:
patent: 4055765 (1977-10-01), Gerber et al.
patent: 4174562 (1979-11-01), Sanders et al.
patent: 4903103 (1990-02-01), Yamashita et al.
patent: 5286986 (1994-02-01), Kihara et al.
Kemmer et al., "New structures for position sensitive semiconductor detectors," London Conf. on Position Specific Detectors, 7-11 Sep. 1987.
Martin, "Interated E and dE/dx semiconductor particle detectors made by ion implantation," Nuclear Instruments and Methods, 15 Jul. 1969, Nether lands, vol. 72, No. 2.
Kemmer et al., "New Detector Concepts," Nuclear Instruments and Methods in Physics Research, vol. A253, No. 3,15 Jan. 1987, pp. 365-377.
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Guay John
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