Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-05-04
2010-06-08
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S678000, C257S698000, C257S725000, C257SE21504
Reexamination Certificate
active
07732911
ABSTRACT:
A semiconductor packaging substrate with improved capability of electrostatic dissipation comprises a dielectric layer, a plurality of leads, a plurality of first electrostatic guiding traces, a plurality of second electrostatic guiding traces and a solder mask. The first electrostatic guiding traces and the second electrostatic guiding traces are formed in pairs in a plurality of electrostatic dissipation regions on the dielectric layer, where each pair of the first and second electrostatic guiding traces are disposed in equal line spacing and are electrically isolated from each other. The solder mask partially covers the leads but exposes the first electrostatic guiding traces and the second electrostatic guiding traces. The first electrostatic guiding traces are connected to some of the leads to enhance protection against electrostatic discharge.
REFERENCES:
patent: 5173766 (1992-12-01), Long et al.
patent: 2006/0081968 (2006-04-01), Bai et al.
patent: 2007/0228574 (2007-10-01), Uchikoshi et al.
patent: 1227939 (2005-02-01), None
patent: 1228819 (2005-03-01), None
Chen Tsung-Lung
Li Ming-Hsun
ChipMOS Technologies Inc.
King Anthony
Lam Cathy N
Nguyen Cuong Q
WPAT, P.C.
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