Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-04-03
2007-04-03
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257SE23178, C257SE25013, C257SE21512, C257S724000, C257S685000, C257S723000, C257S777000, C257S780000, C257S701000, C257S698000, C257S690000, C257S738000, C257S673000
Reexamination Certificate
active
11126110
ABSTRACT:
A semiconductor package without bonding wires and a fabrication method are provided. The semiconductor package includes a substrate having a front surface and a back surface, two chips formed on the front surface, two dielectric layers formed on the chips respectively, two conductive trace layers formed on the dielectric layers respectively, an insulating layer formed on one of the dielectric layers, and a plurality of solder balls implanted on the back surface of the substrate. One of the dielectric layers is formed on one of the chips and attached to an entire non-active surface of the other of the chips.
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Huang Chien Ping
Pu Han-Ping
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Siliconware Precision Industries Co. Ltd.
Williams Alexander Oscar
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