Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2008-06-26
2011-10-04
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S724000, C257S773000, C257S776000, C257S784000, C257S786000, C257SE23010, C257SE23141, C330S169000, C330S170000, C330S286000
Reexamination Certificate
active
08030763
ABSTRACT:
A semiconductor package (20) includes circuits (22, 24). The circuit (22) includes electrical devices (52, 54) interconnected by a bondwire array (62). Likewise, the circuit (24) includes electrical devices (58, 60) interconnected by a bondwire array (64). Signal wires (76) of the bondwire array (62) are proximate to signal wires (78) of the bondwire array (64). Ground wires (66, 68) are located on either side of, and close to, bondwire array (62). Ground wires (70, 72) are located on either side of, and close to, bondwire array (64). The ground wires (66, 68, 70,72) are electrically coupled to a ground region (74). The ground wires (66, 68, 70, 72) reduce a magnetic flux density (140) via induced return currents (126, 130) on the ground wires of opposite polarity to signal currents (124, 128) on the bondwire arrays (62, 64) to reduce inductive coupling between the adjacent bondwire arrays (62, 64).
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Aaen Peter H.
Romero Manuel F.
Freescale Semiconductor Inc.
Gumedzoe Peniel M
Lee Eugene
Meschkow & Gresham P.L.C.
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