Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-06-20
2006-06-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S737000, C257S780000
Reexamination Certificate
active
07064435
ABSTRACT:
A semiconductor package has ball lands each configured to have a composite structure of SMD type and NSMD type. One peripheral portion of the ball land is covered with a mask layer, thus forming the SMD type, whereas the other peripheral portion is exposed through an opening area of the mask layer, thus forming the NSMD type. In one embodiment, the first peripheral portion is disposed to face a central point of a ball-mounting surface of a substrate, and the second peripheral portion is disposed to face the opposite direction to the central point. The composite structure of the ball lands provides more stable and enhanced connections between connection balls, such as solder balls, and the ball-mounting surface.
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Chung Myung-Kee
Kim Kil-Soo
Kwak Min-Keun
Flynn Nathan J.
Marger & Johnson & McCollom, P.C.
Sandvik Benjamin P.
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