Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2005-06-07
2005-06-07
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S783000, C257S787000, C438S113000, C438S126000
Reexamination Certificate
active
06903441
ABSTRACT:
A semiconductor package and a fabrication method thereof are provided, in which a ground pad on a chip is electrically connected to a ground plane on a substrate by means of an electrically-conductive wall formed over a side surface of the chip and an electrically-conductive adhesive used for attaching the chip to the substrate. Therefore, a wire-bonding process is merely implemented for power pads and signal I/O (input/output) pads on the chip without having to form ground wires on the ground pads for electrical connection purposes. This benefit allows the use of a reduced number of bonding wires and simplifies wire arrangement or routability. And, a grounding path from the chip through the electrically-conductive wall and electrically-conductive adhesive to the substrate is shorter than the conventional one of using ground wires, thereby reducing a ground-bouncing effect and improving electrical performances of the semiconductor package.
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Joe Yuan-Ping
Tsai Wen-Ta
Wang Chin Fa
Ishimaru Mikio
Siliconware Precision Industries, Ltd.
Smoot Stephen W.
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