Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2006-04-04
2006-04-04
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S735000, C257S736000, C257S737000, C257S738000
Reexamination Certificate
active
07023088
ABSTRACT:
An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
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Inaba Masatoshi
Kaizu Masahiro
Kurosaka Akihito
Masumoto Kenji
Masumoto Mutsumi
Fujikura Ltd.
Ha Nathan W.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pham Hoai
Texas Instruments Japan Limited
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