Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2005-04-26
2005-04-26
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S106000, C438S125000, C174S250000, C174S256000, C174S260000, C428S901000
Reexamination Certificate
active
06884655
ABSTRACT:
A wiring layer for serving as a first electrode layer of a capacitor portion patterned in a predetermined shape on an insulative base member is formed. A resin layer for serving as a dielectric layer of the capacitor portion is formed on a surface of the wiring layer using an electrophoretic process. Another wiring layer for serving as a second electrode layer of the capacitor portion patterned in a predetermined shape by patterning on the insulative base member inclusive of the resin layer is formed.
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Iljima Takahiro
Rokugawa Akio
Shimizu Noriyoshi
Armstrong Kratz Quintos Hanson & Brooks, LLP
Niebling John F.
Roman Angel
Shinko Electric Industries Co. Ltd.
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