Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2008-07-22
2008-07-22
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S666000, C257S099000, C257S177000, C438S106000
Reexamination Certificate
active
11196321
ABSTRACT:
A semiconductor device includes a semiconductor chip, leads for sending and receiving signals between the semiconductor chip and an external device, fine metal wires, an encapsulant for sealing the leads, and a lid member. On the surface of each of the leads, a metal oxide film is formed by an oxidation treatment. The metal oxide film has a thickness larger than a natural oxide film and no more than 80 nm.
REFERENCES:
patent: 5937279 (1999-08-01), Sawada et al.
patent: 6087713 (2000-07-01), Haruta
patent: 6087715 (2000-07-01), Sawada et al.
patent: 2003/0075792 (2003-04-01), Ruhland
patent: 62200752 (1987-09-01), None
patent: 9-55489 (1997-02-01), None
Hirano Tatsuya
Inao Hisaho
Shimizu Katsutoshi
Jackson Jerome
Valentine Jami M
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