Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-07-23
2010-10-05
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S448000
Reexamination Certificate
active
07808064
ABSTRACT:
An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.
REFERENCES:
patent: 6489675 (2002-12-01), Gruber et al.
patent: 7045870 (2006-05-01), Wataya
patent: 7274101 (2007-09-01), Tomita et al.
patent: 7276738 (2007-10-01), Wada
patent: 2006/0071152 (2006-04-01), Ono
patent: 2007/0181792 (2007-08-01), Yoshimoto et al.
patent: 2008/0042227 (2008-02-01), Asano et al.
patent: 2008/0128848 (2008-06-01), Suzuki et al.
patent: 10-223833 (1998-08-01), None
patent: 2006-108285 (2006-04-01), None
patent: 2007-53149 (2007-03-01), None
patent: 2007-134725 (2007-05-01), None
patent: 2007-214360 (2007-08-01), None
patent: 2007-273629 (2007-10-01), None
patent: 2008-140819 (2008-06-01), None
U.S. Appl. No. 12/629,322, filed Dec. 2, 2009, Saito, et al.
International Electron Devices Meeting 1999 Technical Digest pp. 879-882. H. Kurino et al., “Intelligent Image Sensor Chip with Three Dimensional Structure”.
“Nikkei Micro Devices”, Apr. 1998, pp. 28, 164, and 176.
Ayabe Masayuki
Inoue Ikuko
Kawasaki Atsuko
Matsuo Mie
Sekiguchi Masahiro
Andújar Leonardo
Kabushiki Kaisha Toshiba
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