Semiconductor package including heat sink with layered conductiv

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Patent

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Details

257712, 257675, 257676, 257706, 257707, 257796, H01L 2310, H01L 2328, H01L 2334, H05K 720

Patent

active

058545115

ABSTRACT:
A semiconductor package provided with a heat sink adapted to discharge heat from the package. The package has an oxidation film formed on an upper surface portion of the heat sink to which a semiconductor chip is attached, thereby improving the bonding between the semiconductor chip and heat sink to prevent the occurrence of an interface peel-off and the formation of cracks. This results in an improvement in reliability. A silver layer or a double layer consisting of a nickel layer and a palladium layer formed over the nickel layer is plated on the remaining upper surface portion of the heat sink not attached with the semiconductor chip. Accordingly, it is also possible to achieve easy ground bonding and power bonding. This results in an improvement in performance of the finally produced semiconductor package.

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