Semiconductor package having redistribution layer

Details Semiconductor package having redistribution layer Semiconductor package having redistribution layer

2011-07-12

2011-07-12

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S779000, C257S786000, C257SE23020

Reexamination Certificate

active

07977784

ABSTRACT:
A semiconductor package and a method for making the same, whereby the semiconductor package includes a substrate, a first passivation layer, a first metal layer, a second passivation layer, and second and third metal layers. The substrate has a surface having at least first and second pads. The first passivation layer covers the surface of the substrate and exposes the first pad and the second pad. The first metal layer is formed on the first passivation layer and is electrically connected to the second pad. The second passivation layer is formed on the first metal layer and exposes the first pad and part of the first metal layer. The second metal layer is formed on the second passivation layer and is electrically connected to the first pad. The third metal layer is formed on the second passivation layer and is electrically connected to the first metal layer.

REFERENCES:
patent: 2008/0079150 (2008-04-01), Simon et al.

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