Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S734000, C257S777000
Reexamination Certificate
active
06900525
ABSTRACT:
A semiconductor package to which a potential difference is applied has two or more of the components thereof bound together using a filler metal. The filler metal is a solid solution structure in which the metallic components are atomically dispersed, and may comprise an alloy of gold, silver and copper. A preferred form of the filler metal comprises 60Au20Ag20Cu. Such filler metals in accordance with the invention provide the advantages of silver-based filler metals without the silver migration that leads to eventual shorting of the semiconductor package. When water condenses to form a continuous layer thereof within the semiconductor package due to moisture seeping into the package and temperature changes, the silver within the filler metal does not ionize, and therefore a buildup of silver deposits and eventual shorting of the package does not occur.
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Brosas Ronaldo Francisco Hernandez
Lobsinger Joshua David
Shane Michael John
Ha Nathan W.
Hogan & Hartson LLP
Kyocera America, Inc.
Pham Hoai
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