Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling
Reexamination Certificate
2005-05-03
2005-05-03
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With desiccant, getter, or gas filling
C257S686000, C257S721000, C257S679000, C257S712000, C257S715000, C438S376000, C438S382000
Reexamination Certificate
active
06888232
ABSTRACT:
Manufacturable processes and the resultant structures utilize metal hydride as an internal source of hydrogen to enhance heat removal within semiconductor packages that employ low dielectric constant materials. The use of a metal hydride heated by internal or external sources facilitates pressurizing hydrogen gas or hydrogen-helium gas mixtures within a hermetically-sealed package. The configuration of the metal hydride can include, where needed to generate the pressure required in larger packages, a relatively large area of metal hydride material on at least one or a plurality of hydrogen generation-dedicated chips. Alternatively, the configuration can include at least one or a plurality of relatively small “islands” of metal hydride material on each of at least one or a plurality of integrated circuit-bearing chips.
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Eldridge Jerome M.
Farrar Paul A.
Chu Chris C.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Eckert George
Micron Technology
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