Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1996-06-25
1998-06-02
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257693, 257707, 257276, 257717, 257712, 257676, H01L 2302, H01L 3902, H01L 2348, H01L 2312
Patent
active
057604738
ABSTRACT:
A package for a backside-ground high power transistor comprises a metal base, a flat insulator layer on the base defining a window for receiving the transistor and a pair of flat metal layer bonded to the upper surface of the insulator layer, the flat metal layers serving as electrical leads for connection to the collector and drain of the transistor received therein. A method for bonding a ceramic to a metal is also provided by the present invention. The method comprises the steps of contacting eutectic-forming layers on a common shim structure with ceramics and metals, heating the eutectic-forming layers to a temperature that is greater than the melting temperature of the eutectic-forming layers, and allowing the eutectic-forming layers to solidify, thereby bonding the ceramic to the metal.
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Dickson Joseph F.
Max Lee Benat
Brush Wellman Inc.
Thomas Tom
Williams Alexander Oscar
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