Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-04-05
2011-04-05
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE23002, C257SE23135, C257SE23194
Reexamination Certificate
active
07919833
ABSTRACT:
There are provided a semiconductor package comprising: a semiconductor substrate including an integrated circuit unit, and a crack-propagation preventing unit at least partially formed around a peripheral of the integrated circuit unit of the semiconductor substrate and filled with a heterogeneous material different from a material of the semiconductor substrate, and a method of fabricating the semiconductor package, comprising: at least partially forming a trench around the peripheral of the integrated circuit unit of the semiconductor substrate, and filling the trench with a heterogeneous material different from that of the semiconductor substrate. In accordance with the present invention, the structural and mechanical strength and durability of the semiconductor package, specifically, the wafer level semiconductor package, are improved and the reliability of the product is significantly improved. Furthermore, a fail rate including crack/chipping during a subsequent mounting process lowers, to improve the yield and reduce the whole manufacturing cost.
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Fahmy Wael M
NEPES Corporation
Salerno Sarah K
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