Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
1999-08-20
2001-05-01
Graybill, David E. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S705000, C257S779000
Reexamination Certificate
active
06225693
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a package equipped with a semiconductor element operated with a low loss in radio frequencies (RF), which can be realized at a low cost.
2. Discussion of Background
In case that operating frequencies of semiconductor devices are increased, structures of joining a semiconductor element to a ground surface of a package and/or grounding the package itself are significant. Conventionally, so-called via hole is opened at a ground in a semiconductor element in a downward direction to connect a package with the ground, or a metallic package, specifically for a ground surface, is used to stabilize the ground surface.
However, in recent years, there is a tendency of pursuing low costs of these devices operating at high rates. Therefore, it becomes difficult to apply via holes and/or metallic packages to such semiconductor elements. Instead thereof, connections to grounds are being attained by bonding wires, or packages having ceramic bases are being used for secure groundings. When operating frequencies become 1 GHz or more, grounds themselves may have components of inductance (L) depending on bonding wires and/or arrangements of packages and ground surfaces, whereby properties of semiconductor are caused to be deteriorated.
FIG. 6
shows a conventional package structure. In
FIG. 6
, numerical reference
1
designates a ceramic package; numerical reference
2
designates a semiconductor element; numerical reference
3
designates an inner lead wire for electrically connecting an outer circuit to the semiconductor element; numerical reference
4
designates an Au wire; numerical reference
5
designates a ground area having a structure of metallizing a ceramic; numerical reference
6
designates a jointing material for connecting the semiconductor element
2
to the package
1
; and numerical reference
7
designates an antirunning, being a pattern clipping the metallized ground area portion, for preventing the jointing material from flowing at a time of bonding the Au wires
4
between ground terminals of the semiconductor element
2
and the ground area
5
of package, wherein the wires are bonded on outer sides of the antirunning portions.
FIG. 7
is a cross-sectional view of this package, in which numerical reference
50
designates a grounding area positioned just below the semiconductor element
2
on plating of the package.
However, the conventional semiconductor package for radio frequency has problems that properties of the semiconductor element
2
, specifically including a gain, were deteriorated because there were distances between a semiconductor element
2
and a metallized ground area
5
and between wire bonding and a ground surface just below the semiconductor element
2
and such distances of arrows
100
shown in
FIG. 8
caused inductances of L components.
SUMMARY OF THE INVENTION
It is an object of the present invention to solve the above-mentioned problems inherent in the conventional technique and to provide a semiconductor package for radio frequency, in which grounds of a semiconductor element can be connected to a ground surface of the package by bonding wires within extremely short distances and/or a ground area positioned just below a semiconductor element to an area bonded to a ground surface of the package within extremely short distances, whereby components of inductance causing deterioration of radio frequency properties can be suppressed to be extremely small.
According to a first aspect of the present invention, there is provided a semiconductor package for radio frequency having a grounding surface which is connected to grounding electrodes of a semiconductor element by wires for grounding, wherein the grounding surface is a surface, on which the semiconductor element is mounted, having slit-like regions formed by clipping plating on the package like dotted lines.
According to a second aspect of the present invention, there is provided a semiconductor package for radio frequency, in which slit-like regions formed by clipping plating like dotted lines on the package to prevent disconnections of wires caused by extrusion of a jointing material at a time of mounting a semiconductor element; and an area in contact with the semiconductor element positioned just below the element and areas in contact with the wires for grounding are arranged with extremely short intervals.
According to a third aspect of the present invention, there is provided a semiconductor package for radio frequency having a grounding surface, to which grounding electrodes of a semiconductor element are connected by wires for grounding, in which the grounding surface is a surface, on which the semiconductor element is mounted, including metallic plates attached by a conductive jointing material thereto in order for enabling the wires for grounding to be connected to the grounding electrodes of the semiconductor element.
According to a fourth aspect of the present invention, there is provided a semiconductor package for radio frequency, in which metallic plates are provided to prevent disconnections of wires caused by extrusion of a jointing material at a time of mounting a semiconductor element on the package; and a grounding area positioned just below the semiconductor element and areas for grounding the wires in the package are arranged with extremely short intervals.
According to a fifth aspect of the present invention, there is provided a semiconductor package for radio frequency having a grounding surface, to which grounding electrodes in a semiconductor element are connected by wires for grounding, in which the grounding surface is a surface, on which the semiconductor element is mounted; and the grounding surface includes dielectric members shaped like a rectangular with more frontage than depth and the wires for grounding are connected to the grounding surface on outer sides of the dielectric members being opposite to the semiconductor element.
According to a sixth aspect of the present invention, there is provided a semiconductor package for radio frequency, in which dielectric members shaped like a rectangular with more frontage than depth are provided to prevent disconnections of wires caused by extrusion of a jointing material at a time of mounting a semiconductor element; and a grounding area positioned just below the semiconductor element and areas for grounding the wires in the package are arranged with extremely short intervals.
REFERENCES:
patent: 6001673 (1999-12-01), Marcinkiewicz
patent: 61-101052 (1986-05-01), None
Graybill David E.
McDermott & Will & Emery
Mitsubishi Denki & Kabushiki Kaisha
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