Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-12-31
2010-12-28
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S777000, C257S779000
Reexamination Certificate
active
07859115
ABSTRACT:
A semiconductor package includes a semiconductor chip having a first region and a second region. Bonding pads are formed and through-holes are defined in the first and second regions. Insulation layers are formed on sidewalls of the through-holes, and through-electrodes formed in the through-holes and connected with corresponding bonding pads. The insulation layers formed in the first and second regions have different thicknesses or dielectric constants.
REFERENCES:
patent: 6812549 (2004-11-01), Umetsu et al.
patent: 2004/0080040 (2004-04-01), Dotta et al.
patent: 2007/0048994 (2007-03-01), Tuttle
patent: 2007-335642 (2007-12-01), None
patent: 2009-004648 (2009-01-01), None
patent: 10-0830581 (2008-05-01), None
patent: 10-0879191 (2009-01-01), None
Kim Jong Hoon
Suh Min Suk
Yang Seung Taek
Andújar Leonardo
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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