Semiconductor package and socket thereof and methods of fabricat

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257704, 257690, 257698, 257703, H01L 2348, H01L 2352, H01L 2306

Patent

active

059776234

ABSTRACT:
A semiconductor package and a socket thereof that are easily adaptable to a multiple pin structure includes a nonconductive base layer, a plurality of conductive metallic leads that extend vertically through the base layer, a wiring layer in which a pattern of fine metallic wires are formed to electrically couple to the conductive metallic leads to a semiconductor chip mounted in the package, a recess formed in the central portion of the wiring layer, and a cover for closing the upper portion of the recess. A semiconductor chip is mounted on the bottom portion of the recess, and conductive wires electrically couple the semiconductor chip to the fine metallic wires of the wiring layer. A socket for receiving the semiconductor package includes a socket body, a first plurality of socket pins arranged to couple with leads on a bottom surface of a semiconductor chip package mounted in the socket, a second plurality of socket pins arranged to couple with leads on peripheral side surfaces of a semiconductor chip package mounted in the socket, and a hinged cover.

REFERENCES:
patent: 5043794 (1991-08-01), Tai et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor package and socket thereof and methods of fabricat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor package and socket thereof and methods of fabricat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor package and socket thereof and methods of fabricat will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2139192

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.