Semiconductor package and method of preparing same

Details Semiconductor package and method of preparing same Semiconductor package and method of preparing same

2005-09-06

2005-09-06

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Solder wettable contact, lead, or bond

C257S678000, C257S784000, C257S668000, C257S778000, C257S788000, C257S789000, C257S791000, C257S782000, C257S783000, C257S795000, C257S084000, C438S106000, C438S108000, C438S121000, C438S127000, C156S335000

Reexamination Certificate

active

06940177

ABSTRACT:
A semiconductor package comprising a semiconductor wafer having an active surface comprising at least one integrated circuit, wherein each integrated circuit has a plurality of bond pads; and at least one cured silicone member covering at least a portion of the active surface, wherein at least a portion of each bond pad is not covered by the silicone member, the silicone member has a coefficient of linear thermal expansion of from 60 to 280 μm/m° C. between −40 and 150° C. and a modulus of from 1 to 300 MPa at 25° C., and the silicone member is prepared by the method of the invention.

REFERENCES:
patent: 5171716 (1992-12-01), Cagan et al.
patent: 6103552 (2000-08-01), Lin
patent: 6197613 (2001-03-01), Kung et al.
patent: 6239378 (2001-05-01), Shephard
patent: 6277669 (2001-08-01), Kung et al.
patent: 6284563 (2001-09-01), Fjelstad
patent: 2004/0102601 (2004-05-01), Saito et al.
patent: 1041117 (2000-04-01), None

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